Optimization of silver nanowire networks for polymer light emitting diode electrodes.
Identifieur interne : 000497 ( Main/Exploration ); précédent : 000496; suivant : 000498Optimization of silver nanowire networks for polymer light emitting diode electrodes.
Auteurs : RBID : pubmed:23466504Abstract
Silver nanowire (Ag NW) networks are promising candidates for replacement of indium tin oxide (ITO). However, transparent conductors based on Ag NW networks often suffer from 'haziness' resulting from surface roughness. Thus, in addition to achieving suitable transparency and conductivity, surface roughness must be minimized if realistic implementation of Ag NW networks as transparent conductors is to be realized. In this work, we have reduced the surface roughness of Ag NW networks to below 5 nm as compared to 54 nm for as-deposited Ag NWs through optimization of the low temperature annealing treatment and planarization by poly(3,4 ethylenedioxythiophene)-poly(styrenesulfanate). Using this method, we have been able to produce Ag NW networks with transmittances and sheet resistances of 87% and 11Ω/sq, respectively. These are some of the best values reported for non-oxide-based transparent conductors. Incorporation of these smooth Ag networks into polymer light emitting diodes fabricated in our laboratory yields device characteristics that are comparable to or better than those with commercially available ITO.
DOI: 10.1088/0957-4484/24/12/125202
PubMed: 23466504
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Optimization of silver nanowire networks for polymer light emitting diode electrodes.</title><author><name sortKey="Coskun, Sahin" uniqKey="Coskun S">Sahin Coskun</name><affiliation wicri:level="1"><nlm:affiliation>Department of Metallurgical and Materials Engineering, Middle East Technical University, Ankara, 06800, Turkey.</nlm:affiliation><country xml:lang="fr">Turquie</country><wicri:regionArea>Department of Metallurgical and Materials Engineering, Middle East Technical University, Ankara, 06800</wicri:regionArea></affiliation></author><author><name sortKey="Selen Ates, Elif" uniqKey="Selen Ates E">Elif Selen Ates</name></author><author><name sortKey="Unalan, Husnu Emrah" uniqKey="Unalan H">Husnu Emrah Unalan</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1088/0957-4484/24/12/125202</idno><idno type="RBID">pubmed:23466504</idno><idno type="pmid">23466504</idno><idno type="wicri:Area/Main/Corpus">000758</idno><idno type="wicri:Area/Main/Curation">000758</idno><idno type="wicri:Area/Main/Exploration">000497</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Silver nanowire (Ag NW) networks are promising candidates for replacement of indium tin oxide (ITO). However, transparent conductors based on Ag NW networks often suffer from 'haziness' resulting from surface roughness. Thus, in addition to achieving suitable transparency and conductivity, surface roughness must be minimized if realistic implementation of Ag NW networks as transparent conductors is to be realized. In this work, we have reduced the surface roughness of Ag NW networks to below 5 nm as compared to 54 nm for as-deposited Ag NWs through optimization of the low temperature annealing treatment and planarization by poly(3,4 ethylenedioxythiophene)-poly(styrenesulfanate). Using this method, we have been able to produce Ag NW networks with transmittances and sheet resistances of 87% and 11Ω/sq, respectively. These are some of the best values reported for non-oxide-based transparent conductors. Incorporation of these smooth Ag networks into polymer light emitting diodes fabricated in our laboratory yields device characteristics that are comparable to or better than those with commercially available ITO.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23466504</PMID><DateCreated><Year>2013</Year><Month>03</Month><Day>12</Day></DateCreated><DateCompleted><Year>2013</Year><Month>08</Month><Day>19</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>12</Issue><PubDate><Year>2013</Year><Month>Mar</Month><Day>29</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Optimization of silver nanowire networks for polymer light emitting diode electrodes.</ArticleTitle><Pagination><MedlinePgn>125202</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/12/125202</ELocationID><Abstract><AbstractText>Silver nanowire (Ag NW) networks are promising candidates for replacement of indium tin oxide (ITO). However, transparent conductors based on Ag NW networks often suffer from 'haziness' resulting from surface roughness. Thus, in addition to achieving suitable transparency and conductivity, surface roughness must be minimized if realistic implementation of Ag NW networks as transparent conductors is to be realized. In this work, we have reduced the surface roughness of Ag NW networks to below 5 nm as compared to 54 nm for as-deposited Ag NWs through optimization of the low temperature annealing treatment and planarization by poly(3,4 ethylenedioxythiophene)-poly(styrenesulfanate). Using this method, we have been able to produce Ag NW networks with transmittances and sheet resistances of 87% and 11Ω/sq, respectively. These are some of the best values reported for non-oxide-based transparent conductors. Incorporation of these smooth Ag networks into polymer light emitting diodes fabricated in our laboratory yields device characteristics that are comparable to or better than those with commercially available ITO.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Coskun</LastName><ForeName>Sahin</ForeName><Initials>S</Initials><Affiliation>Department of Metallurgical and Materials Engineering, Middle East Technical University, Ankara, 06800, Turkey.</Affiliation></Author><Author ValidYN="Y"><LastName>Selen Ates</LastName><ForeName>Elif</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Unalan</LastName><ForeName>Husnu Emrah</ForeName><Initials>HE</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>03</Month><Day>06</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>3</Month><Day>06</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>3</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>3</Month><Day>8</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>3</Month><Day>8</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/12/125202</ArticleId><ArticleId IdType="pubmed">23466504</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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